S29GL512S11FHIV23

Memory IC Overview

The S29GL512S11FHIV23 is a 512-Mbit (64M x 8) parallel NOR flash memory from the GL-S family, fabricated on 65-nm MIRRORBIT Eclipse technology. It operates with a single 2.7 V to 3.6 V supply and features an asynchronous random access time of 110 ns and a page access time of 25 ns. The device utilizes a 512-byte write buffer for efficient programming and includes internal hardware ECC for single-bit error correction. It is housed in a 64-ball LAE Fortified BGA package measuring 9 mm × 9 mm.

Memory IC Feature Summary

• Supports versatile I/O with a wide voltage range from 1.65 V to VCC
• Includes a 512-byte write buffer to accelerate effective programming times
• Features advanced sector protection with both volatile and non-volatile methods
• Provides automatic error checking and correction via internal hardware ECC

Memory IC Applications

• Embedded applications requiring high density and lower power consumption
• Systems utilizing Execute-In-Place (XIP) capabilities
• Data storage solutions needing fast program speeds

Memory IC Procurement Notes

Verify that the specific ordering suffix matches the required package type, temperature grade, and lead-free status. Confirm compatibility with the host system's voltage levels and interface requirements before procurement. Ensure the component meets all necessary environmental and safety certifications for the intended deployment region.

Memory IC Selection Notes

Select this component when a 512-Mbit capacity with parallel interface is required. Consider the 110 ns access speed and 64-ball BGA packaging for space-constrained designs. Evaluate the need for Versatile I/O support if the system operates with varying I/O voltage levels. Check if the industrial temperature range aligns with operational conditions.

Memory IC Part Context

This part belongs to the Cypress/Infineon GL-S family of 3.0 V core MIRRORBIT flash memories. The family ranges from 128 Mb to 1 Gb densities and shares common architectural features such as uniform 128-kbyte sectors and embedded algorithm controllers. The GL-S series is designed to combine XIP performance with data storage density.

Memory IC Replacement Considerations

Compatible substitutes within the same density and package include S29GL512S11TFV01 and S29GL512S11DHA023. Verify pinout compatibility and electrical specifications before substitution.