Memory IC S29GL512T10DHI023 product image

S29GL512T10DHI023

$6.59
  • Description:IC FLASH 512MBIT PARALLEL 64FBGA
  • Series:GL-T
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:4cbd5e070074 Category: Brand:

  
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S29GL512T10DHI023 is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC FLASH 512MBIT PARALLEL 64FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for S29GL512T10DHI023

  • Description:IC FLASH 512MBIT PARALLEL 64FBGA
  • Series:GL-T
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR
  • Memory Size:512Mbit
  • Memory Organization:64M x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:60ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:64-LBGA
  • Supplier Device Package:64-FBGA (9x9)
  • Access Time:100 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for S29GL512T10DHI023

S29GL512T10DHI023

Memory IC Overview

The S29GL512T10DHI023 is a 512-Mbit Parallel NOR Flash memory device from the GL-T family, manufactured by Infineon Technologies. It utilizes 45-nm MIRRORBIT technology and supports an asynchronous interface with versatile I/O capabilities. The device features a 56-pin TSOP package and operates within a voltage range of 2.7 V to 3.6 V. Key performance metrics include a maximum random access time (tACC) of 100 ns at full VCC/VIO and 110 ns with versatile I/O. Page access time (tPACC) is specified at 15 ns. The memory organization supports both x8 and x16 data bus widths.

Memory IC Feature Summary

  • Features a 512-byte write buffer for efficient programming operations.
  • Includes internal hardware Automatic Error Checking and Correction (ECC).
  • Supports Advanced Sector Protection (ASP) with volatile and non-volatile methods.
  • Provides a separate 2048-byte One-Time Programmable (OTP) Secure Silicon Region.

Memory IC Applications

  • Embedded applications requiring Execute-in-Place (XIP) functionality.
  • Industrial systems operating within -40°C to +85°C temperature ranges.
  • Automotive electronics requiring AEC-Q100 grade compliance.

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type, temperature grade, and I/O voltage specifications. Ensure compatibility with system voltage requirements and interface timing constraints before procurement.

Memory IC Selection Notes

Select this component for designs needing high-density parallel NOR flash with fast page access. Consider the versatile I/O feature if the system requires lower voltage logic levels. Verify that the required sector protection and ECC features align with the application's data integrity needs.

Memory IC Part Context

This part belongs to the S29GL512T series within the GL-T MirrorBit Eclipse Flash family. It is designed as a drop-in replacement for previous generation devices while offering improved density and performance through 45-nm process technology.

Memory IC Replacement Considerations

Consult the official datasheet for valid substitute part numbers within the S29GL512T or S29GL01GT families. Ensure any replacement matches the required package, speed grade, and temperature range.

S29GL512T10DHI023S29GL512T10DHI023
$6.59
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