S70KL1281DABHI023

Memory IC Overview

The Infineon S70KL1281DABHI023 is a 128-Mb HyperRAM self-refresh DRAM featuring a low-signal-count HyperBus interface. It supports 1.8 V and 3.0 V core and I/O supplies, delivering up to 333 MBps at 166 MHz or 200 MBps at 100 MHz. The device utilizes an 8-bit data bus with Double-Data Rate (DDR) transfers. Key timing parameters include a maximum access time of 36 ns at 166 MHz and a standby current of 300 µA at 105 °C. It is housed in a 24-ball FBGA package.

Memory IC Feature Summary

• Self-refreshing DRAM architecture that eliminates host refresh management requirements
• Low-pin-count HyperBus interface supporting high-speed DDR data transfers
• Configurable burst lengths including wrapped and linear sequences for optimized data flow

Memory IC Applications

• Graphics processing requiring additional RAM buffers
• Audio processing applications needing high throughput
• Data aggregation tasks in embedded systems

Memory IC Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm voltage and package variants. Confirm RoHS compliance status and check for any discontinuation notices as this series may be marked Not Recommended for New Designs. Ensure compatibility with existing PCB footprints and signal integrity requirements before finalizing procurement.

Memory IC Selection Notes

Select this component when a compact memory solution with high bandwidth is required without complex refresh logic. Compare performance metrics such as access latency and power consumption against alternative PSRAM options. Verify that the host controller supports the HyperBus protocol and can handle the specific clock rates and burst configurations defined in the specification.

Memory IC Part Context

This part belongs to the S70KL/S70KS family of HyperRAM devices developed originally by Cypress Semiconductor and now maintained by Infineon Technologies. These devices are designed to provide SRAM-like simplicity with DRAM density. The product line targets automotive and industrial applications requiring reliable, high-speed volatile memory solutions.

Memory IC Replacement Considerations

S70KL1281DABHB023

Memory IC FAQ

How does the RWDS signal function during read transactions?

During read transactions, the RWDS signal acts as a slave output serving as a read data strobe. Data values are edge-aligned with the transitions of the RWDS signal.

What burst types are supported by the HyperBus interface?

The device supports both wrapped and linear burst sequences. Wrapped bursts are used for critical word first cache line fills, while linear bursts are used for large contiguous data transfers.