S70KS1282GABHB023

Memory IC Overview

The Infineon S70KS1282GABHB023 is a 128-Mb HYPERRAM self-refresh DRAM featuring a HYPERBUS interface. It supports 1.8 V and 3.0 V operation with a maximum clock rate of 200 MHz, achieving data throughput up to 400 MBps. The device utilizes a 24-ball FBGA package and operates within an automotive temperature range of -40°C to +105°C. Key electrical parameters include a maximum access time of 35 ns and configurable burst lengths.

Memory IC Feature Summary

• Self-refreshing pseudo static RAM architecture eliminates the need for external refresh management by the host controller.
• HYPERBUS interface provides high-speed bidirectional data transfer using a low pin count configuration.
• Supports both linear and wrapped burst sequences for flexible memory access patterns.
• Includes hybrid sleep and deep power down modes for optimized energy efficiency.

Memory IC Applications

• Automotive telematics control units
• Industrial automation systems
• Machine vision applications

Memory IC Procurement Notes

Verify that the specific ordering suffix matches the required voltage and temperature grade. Confirm package availability and lead times directly with authorized distributors. Ensure ESD handling protocols are followed during assembly. Check for RoHS compliance documentation prior to integration.

Memory IC Selection Notes

Select this component when a high-bandwidth, low-pin-count memory solution is required for embedded systems. The dual-die architecture supports extended burst capabilities suitable for graphics or data-intensive tasks. Ensure the host controller supports the HYPERBUS protocol and DDR timing requirements for proper system integration.

Memory IC Part Context

This part belongs to the S70KS1282 family of HYPERRAM devices. It is designed as a drop-in replacement for previous generation PSRAMs while offering higher density and improved performance. The KS series specifically targets automotive and industrial environments requiring robust reliability.

Memory IC Replacement Considerations

S70KL1282DPBHB023

Memory IC FAQ

How does the device handle memory refresh?

The device features internal control logic that manages periodic refresh operations on the DRAM array automatically, allowing it to function as pseudo static RAM without host intervention.

What burst types are supported?

The device supports both linear bursts for sequential data transfers and wrapped bursts for critical word first cache line fills, which can be dynamically intermixed.