SAC2504

Overview

The SAC2504 is a 0.15μm E-beam gate GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) chip designed for low noise and medium power amplifier applications up to 40 GHz. It features high associated gain and dynamic range with gold-plated bond pads suitable for thermo-compression or thermo-sonic wire bonding. Key electrical parameters include a saturated drain current of 60 mA typical, trans-conductance of 55 mS, and a minimum noise figure of 1.4 dB at 30 GHz. The device operates with a pinch-off voltage of -1.2 V and provides 6 dB associated gain at 30 GHz under standard bias conditions.

Feature Summary

• Utilizes 0.15μm E-beam gate technology for high performance
• Gold-plated bond pads support thermo-compression and thermo-sonic wire bonding
• Designed for operation in circuits up to 40 GHz
• Features high associated gain and high dynamic range

Applications

• Microwave HMIC
• Test and Measurement
• Radar and ECM

Procurement Notes

Verify the specific revision status and datasheet version when sourcing components. Confirm that the supplier provides S-parameter files if required for simulation. Ensure handling procedures strictly follow electrostatic discharge precautions during storage and assembly to prevent damage to the delicate semiconductor structure.

Selection Notes

Select this component for designs requiring low noise figures around 1.4 dB at 30 GHz. Verify bias conditions match the specified Vds=2V and Ids=10mA for optimal noise and gain performance. Consider the 290 mW power dissipation limit and thermal resistance when designing heat management solutions for the chip.

Part Context

This part is a discrete semiconductor die manufactured by SuperApex, LLC. It belongs to the category of Gallium Arsenide pHEMT devices intended for microwave frequencies. The component is supplied as an unencapsulated chip requiring custom mounting and wire bonding integration into larger RF modules or hybrid circuits.

Replacement Considerations

No public substitute part numbers are documented in the official datasheet. Designers should consult SuperApex, LLC directly for potential alternative devices within their portfolio that meet similar frequency and noise specifications.

FAQ

What is the recommended wire bonding method?

Thermo-compression bonding with 0.7mil gold wire is recommended.

What are the absolute maximum ratings for Gate-Source Voltage?

The absolute maximum rating for Gate-Source Voltage is between -1.2 V and -0.2 V.

How should the chip be attached?

Conductive epoxy or eutectic die attach is recommended for die attachment.