SAV-541+

SAV-541+

$2.20
  • Description:RF MOSFET E-PHEMT 3V MMM1362
  • Series:-

SKU:3aba9d9a47a6 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET E-PHEMT 3V MMM1362
  • Series:-
  • Mfr:Mini-Circuits
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:E-pHEMT
  • Frequency:45MHz ~ 6GHz
  • Gain:23.2dB
  • Voltage - Test:3 V
  • Current Rating (Amps):-
  • Noise Figure:1.9dB
  • Current - Test:60 mA
  • Power - Output:21.5dB
  • Voltage - Rated:5 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:MMM1362
  • Configuration:-

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SAV-541+

Overview

The SAV-541+ is an ultra-low noise, medium current Enhancement-mode Pseudomorphic High Electron Mobility Transistor (E-PHEMT) manufactured by Mini-Circuits. It operates within a frequency range of 0.045 to 6 GHz and utilizes a plastic molded SOT-343 (SC-70) package designated as Case Style MMM1362. The device requires external biasing and matching components for implementation. Key electrical specifications include a typical gain of 17 dB at 2 GHz, a maximum output IP3 of +33 dBm, and a 1 dB compression point of +20 dBm. It functions with a single positive supply voltage.

Feature Summary

  • Utilizes E-PHEMT technology to enable operation with a single positive supply voltage.
  • Provides ultra-low noise figure performance, particularly effective below 2.5 GHz.
  • Delivers high linearity characterized by high output third-order intercept point (IP3).
  • Designed for demanding base station applications requiring combined low noise and high linearity.

Applications

  • Cellular infrastructure systems
  • WCDMA networks
  • WiMax communications
  • WLAN deployments
  • UNII and HIPERLAN standards

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm RoHS compliance status. Ensure that the procurement channel sources genuine components directly from authorized distributors or the manufacturer to guarantee authenticity. Confirm that the delivered units match the exact case style and pinout configuration required for your PCB layout design.

Selection Notes

Select this component when system requirements demand simultaneous low noise figure and high linearity in a compact surface-mount form factor. Evaluate the need for external DC blocking, bias networks, and impedance matching circuits during the design phase. Consider alternative TAMP family models if integrated modules with pre-integrated bias and matching are preferred over discrete transistor solutions.

Part Context

This device belongs to the SAV series of E-PHEMT transistors produced by Mini-Circuits. It is specifically engineered for RF amplification tasks where signal integrity and minimal noise addition are critical. The component serves as a foundational active element for building low-noise amplifier stages in modern wireless communication equipment.

Replacement Considerations

The datasheet identifies the Avago ATF-54143 as a potential replacement candidate. Suitability for model replacement must be determined solely by the customer based on electrical performance criteria, stimulus conditions, application compatibility, and environmental stresses.

FAQ

What is the recommended operating drain-source voltage?

The device is typically operated with a drain-source voltage of 3V or 4V, depending on the desired trade-off between noise figure and gain performance.

Does the SAV-541+ require external components to function?

Yes, the datasheet explicitly states that external biasing and matching components are required for proper operation.

What is the maximum allowable gate-source voltage?

The absolute maximum rating for gate-source voltage is specified as -5 to 0.7 V.

SAV-541+SAV-541+
$2.20
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