SCT025H120G3AG

Single FETs, MOSFETs Overview

The SCT025H120G3AG is an automotive-grade silicon carbide power MOSFET developed using ST’s third-generation SiC technology. It features a 1200 V drain-source voltage and a typical on-resistance of 27 mΩ at 18 V gate drive. The device supports a continuous drain current of 55 A and a pulsed current of 228 A. Packaged in the H²PAK-7 form factor, it includes a dedicated source sensing pin to enhance efficiency. The component is qualified under the AEC-Q101 standard for automotive reliability.

Single FETs, MOSFETs Feature Summary

• AEC-Q101 qualified for automotive applications
• Very low on-resistance across the entire temperature range
• High-speed switching performance with low capacitances
• Fast and robust intrinsic body diode
• Source sensing pin for increased efficiency

Single FETs, MOSFETs Applications

• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC)

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code SCT025H120G3AG against the latest official datasheet DS14137 Rev 1 before procurement. Confirm that the H²PAK-7 package dimensions and recommended footprint align with your PCB design requirements. Ensure that the thermal management solution accounts for the junction-to-case thermal resistance specified in the electrical ratings table to maintain safe operating temperatures during operation.

Single FETs, MOSFETs Selection Notes

Select this component when designing high-efficiency electric vehicle powertrains requiring robust switching capabilities. The inclusion of a source sensing pin allows for precise control loop adjustments to minimize conduction losses. Consider the device's high operating junction temperature capability and fast body diode recovery characteristics when evaluating system-level thermal constraints and electromagnetic interference profiles compared to alternative silicon-based solutions.

Single FETs, MOSFETs Part Context

This part belongs to STMicroelectronics' advanced third-generation silicon carbide MOSFET family. These devices are engineered to provide superior on-resistance per unit area and excellent switching performance independent of temperature variations. The H²PAK-7 package provides industry-standard outlines with improved thermal dissipation capabilities, facilitating integration into compact and high-power density automotive modules.

Single FETs, MOSFETs Replacement Considerations

Consult the official STMicroelectronics product selector or datasheet cross-reference guides to identify verified substitute part numbers. Do not assume functional equivalence based solely on voltage and current ratings; verify package compatibility and electrical characteristics such as gate charge and switching times against the original specifications.