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The SD2931-10 is a gold-metallized N-channel MOS field-effect RF power transistor designed for large-signal applications up to 230 MHz. It operates with a drain-source voltage of 125 V and supports a continuous drain current of 20 A. The device delivers a minimum output power of 150 W with a typical gain of 14 dB at 175 MHz. It features a thermally enhanced M174 package, offering 25% lower thermal resistance compared to standard variants. Operating temperatures range from -65°C to +150°C or +200°C depending on specific configuration.
Verify the exact suffix designation when ordering, as variations such as -10W or -12MR may indicate differences in moisture resistance or specific thermal characteristics despite electrical equivalence. Confirm RoHS compliance status and packaging type directly with the manufacturer or authorized distributor to ensure alignment with project requirements.
Select this component for designs requiring robust performance in ISM bands where thermal management is critical. The gold metallization offers superior durability compared to standard silicon devices. Ensure the driving circuit can support the common source configuration and that the heat sink interface matches the M174 package dimensions for optimal thermal transfer.
This part belongs to the SD2931 series of HF/VHF/UHF RF power transistors. It is electrically identical to the standard SD2931 MOSFET but distinguishes itself through mechanical compatibility combined with improved thermal capabilities. The series represents best-in-class solutions for applications demanding both high power output and operational ruggedness.
The standard SD2931 serves as the primary electrical equivalent. For environments requiring extreme moisture resistance, the SD2931-12MR is a mechanically compatible alternative with specialized packaging. Verify pinout and thermal pad specifications before substitution to maintain circuit integrity.