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The SD2931-11 is a gold metallized N-channel MOS field-effect RF power transistor designed for large signal applications up to 230 MHz. It operates with a drain-source voltage of 125 V and delivers a minimum output power of 150 W at 175 MHz with 14 dB gain. The device features a maximum operating junction temperature of 200 °C and a thermal resistance (junction-to-case) of 0.45 °C/W. Packaged in the M174 epoxy-sealed format, it offers mechanical compatibility with standard SD2931 units while providing improved thermal capability.
Verify the specific sorting code marking on the unit to confirm the Gate-Source Voltage (VGS) and Forward Transconductance (GFS) ranges. The datasheet provides detailed sort tables linking alphanumeric codes to electrical parameter limits. Ensure the procurement specification matches the required performance bin for the intended circuit design.
Select this component for applications requiring high ruggedness and thermal stability in ISM bands. The device supports operation up to 200 °C junction temperature. Consider the impedance data provided for 30 MHz and 175 MHz when designing matching networks. Verify that the M174 package dimensions fit the available board space and thermal management infrastructure.
The SD2931-11 belongs to the SD2931 series of HF/VHF/UHF N-channel MOSFETs manufactured by STMicroelectronics. It shares electrical characteristics with the standard SD2931 but includes a thermally enhanced M174 epoxy-sealed package. This variant is optimized for environments where reliability and heat dissipation are critical factors.
The SD2931-11 is mechanically compatible with the standard SD2931 MOSFET. Designers can substitute the standard version if the specific thermal enhancements of the -11 suffix are not required, provided the application does not demand the lower thermal resistance offered by the -11 package.