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The SD2931-12W is a single N-channel enhancement-mode RF power MOSFET manufactured by STMicroelectronics. It operates with a drain-source voltage of 125 V and supports a continuous drain current of 20 A. The device is designed for large-signal applications up to 230 MHz, delivering a minimum output power of 150 W with a typical power gain of 14 dB at 175 MHz. It utilizes the M174 surface-mount package with four pins. The component features gold metallization for improved thermal stability and is rated for operation within a temperature range extending up to 200°C.
Verify the specific suffix against official datasheets to confirm electrical characteristics, as variations may exist within the SD2931 family. Ensure compatibility with existing thermal management solutions due to the high power dissipation requirements. Confirm that the M174 footprint matches the design layout before finalizing procurement orders.
Select this component for designs requiring high linearity and power density in the HF/VHF bands. Evaluate the thermal resistance specifications to ensure adequate heat sinking is implemented. Compare the 125 V rating against peak voltage transients in the target circuit to maintain safe operating margins during large-signal operation.
This part belongs to the SD2931 series of RF power transistors from STMicroelectronics. The series includes variants such as the SD2931-10 and SD2931-12MR, which share similar electrical profiles but differ in packaging or thermal enhancements. These devices are engineered specifically for robust performance in demanding radio frequency environments.
The SD2931-12MR is electrically identical but offers lower thermal resistance. Verify mechanical compatibility if substituting, as pinouts and dimensions must align with the existing board layout without modification.