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The SD2931 is a gold metallized N-channel MOS field-effect RF power transistor designed for large signal applications up to 230 MHz. It operates with a drain-source voltage of 125 V and a continuous drain current of 20 A. The device delivers a minimum output power of 150 W with 14 dB gain at 175 MHz under standard test conditions (VDD = 50 V, IDQ = 250 mA). It features excellent thermal stability and utilizes the M174 epoxy-sealed package. The maximum operating junction temperature is rated at 200 °C.
Verify component authenticity through authorized STMicroelectronics distributors or certified suppliers. Confirm the specific marking code matches the official datasheet specifications. Check for RoHS compliance status as manufacturing processes may vary by production batch. Ensure proper handling procedures are followed due to the sensitive nature of RF power components.
Select this component for high-frequency RF power stages requiring robust thermal performance. Evaluate the M174 package dimensions against the available PCB space constraints. Consider the 125 V breakdown voltage when designing biasing networks. Verify impedance matching requirements align with the typical input and load impedances provided in the datasheet graphs.
This part belongs to the SD2931 series of RF power transistors manufactured by STMicroelectronics. It is specifically engineered for HF, VHF, and UHF frequency ranges. The series includes variants such as the SD2931-10W and SD2931-12MR, which share similar electrical characteristics but may differ in packaging or thermal resistance specifications.
The SD2931-10W and SD2931-12MR are electrically identical alternatives within the same family. These variants offer mechanical compatibility with the standard SD2931 while providing improved thermal capabilities. Designers should verify pinout consistency and package dimensions before substituting.