SD2932W

Overview

The SD2932W is a gold-metallized N-channel MOS field-effect RF power transistor designed for large-signal applications up to 250 MHz. It operates with a 50 V DC supply and delivers a minimum output power of 300 W with 15 dB gain at 175 MHz. The device features excellent thermal stability and is configured for common source push-pull operation. It utilizes a screw mount installation style within an M174 package, supporting high-power RF generation in demanding environments.

Feature Summary

• Gold metallization for enhanced reliability
• Excellent thermal stability characteristics
• Common source push-pull configuration

Applications

• HF/VHF/UHF RF power amplification
• Large signal applications up to 250 MHz
• High power RF generation systems

Procurement Notes

Verify the specific suffix 'W' against official STMicroelectronics documentation to confirm exact mechanical or electrical variations compared to the base SD2932 model. Ensure compatibility with existing M174 mounting hardware and verify that the 300 W output power rating aligns with system thermal management requirements before finalizing procurement.

Selection Notes

Select this component for designs requiring 300 W output power at 175 MHz with 15 dB gain. The M174 screw-mount package necessitates appropriate heatsinking infrastructure. Confirm that the 50 V DC operating voltage matches the power supply design and that the push-pull topology fits the circuit architecture.

Part Context

The SD2932W belongs to the SD2932 series of RF power transistors from STMicroelectronics. This series is characterized by gold-metallized N-channel MOS technology optimized for HF, VHF, and UHF bands. The device serves as a high-power solution for broadcast and communication infrastructure requiring robust thermal performance.

Replacement Considerations

The SD2942 offers 350 W output power and lower R DS(on) but requires verification of pinout and package compatibility. Cross-reference datasheets to ensure the higher power rating does not exceed thermal limits of the current enclosure.