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Product Detailed Parameters
- Description：RF MOSFET 50V M244
- Series：-
- Mfr：STMicroelectronics
- Package：Box
- Technology：MOSFET (Metal Oxide)
- Frequency：175MHz
- Gain：17dB
- Voltage - Test：50 V
- Current Rating (Amps)：40A
- Noise Figure：-
- Current - Test：500 mA
- Power - Output：350W
- Voltage - Rated：130 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：M244
- Supplier Device Package：M244
- Configuration：N-Channel
Download product information
Overview
The SD2942 is a gold metallized N-channel MOS field-effect RF power transistor designed for very high power applications up to 250 MHz. It operates with a 50 V DC supply and offers 25% lower R DS(ON) than industry standards, alongside 20% higher power saturation compared to the ST SD2932. The device delivers a minimum output power (P OUT) of 350 W with 15 dB gain at 175 MHz. Key characteristics include excellent thermal stability and a common source push-pull configuration.
Feature Summary
- Gold metallization for enhanced performance
- Excellent thermal stability
- Common source push-pull configuration
Applications
- Very high power RF applications up to 250 MHz
- 50 V DC large signal applications
Procurement Notes
Verify the specific ordering suffix and package type against the manufacturer's official datasheet before procurement. Confirm that the component is in full production status as indicated in public documentation. Ensure compatibility with the intended RF circuit design parameters, particularly regarding the 50 V DC operating voltage and thermal management requirements for the specified power levels.
Selection Notes
Select the SD2942 when designing RF power stages requiring high efficiency and ruggedness in the HF/VHF/UHF bands. Its low R DS(ON) and high power saturation make it suitable for demanding environments where reliability is critical. Consider the common source push-pull topology for optimal performance in high-power amplifier configurations up to 250 MHz.
Part Context
The SD2942 belongs to the family of HF/VHF/UHF RF power N-channel MOSFETs from STMicroelectronics. It is positioned as an upgrade over previous models like the SD2932, offering improved electrical characteristics such as lower on-resistance and higher power saturation. This places it within the category of robust discrete RF power transistors intended for professional communication and broadcast infrastructure.
Replacement Considerations
Public documentation indicates the SD2942 offers 20% higher power saturation than the ST SD2932. Designers transitioning from the SD2932 should verify pinout compatibility and thermal interface specifications. No other direct substitute part numbers are confirmed in the provided public data.
