SD56120M

Overview

The SD56120M is an N-Channel enhancement-mode lateral MOSFET RF power transistor designed for broadband commercial and industrial applications up to 1.0 GHz. It operates in common source mode at 32 V, delivering 120 W output power with 13 dB gain at 860 MHz. The device features internal input matching, BeO-free packaging, and excellent thermal stability. Absolute maximum ratings include a drain-source voltage of 65 V, gate-source voltage of ±20 V, continuous drain current of 14 A, and junction temperature up to 200 °C. Thermal resistance from junction to case is 0.55 °C/W.

Feature Summary

• Internal input matching simplifies circuit design for high linearity requirements.
• BeO-free package construction meets environmental safety standards.
• Excellent thermal stability supports reliable operation in push-pull configurations.

Applications

• TV broadcast systems requiring high linearity
• Broadband commercial RF amplifiers
• Industrial RF equipment

Procurement Notes

Verify the specific revision history and lead-free status (ECOPACK) when sourcing components. Confirm that the M252 package dimensions match the target PCB footprint. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance for optimal heat dissipation during operation.

Selection Notes

Select this component for applications operating near 860 MHz where 120 W output is required. Verify that the system can provide the necessary 32 V supply and bias currents. Consider the internal matching capabilities if minimizing external passive components is a priority for the amplifier topology.

Part Context

This part belongs to STMicroelectronics' LDMOST plastic family of RF power transistors. It shares characteristics with other devices in the series but is distinct in its specific frequency range and power handling capabilities within the 65 V breakdown voltage category.

Replacement Considerations

Check for direct pin-compatible alternatives within the same manufacturer's portfolio that offer updated process technologies or different thermal profiles. Verify that any substitute maintains the 120 W output power specification at the target frequency.