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The SD57045 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor from the LdmoST family, designed for broadband commercial and industrial applications up to 1.0 GHz. It delivers 45 W output power with 13 dB gain at 945 MHz when operating in common source mode at 28 V. The device features excellent thermal stability and utilizes a BeO-free package. Key electrical parameters include a maximum drain-source voltage of 65 V, continuous drain current of 5 A, and maximum power dissipation of 93 W. It operates within a temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix and package variant (e.g., M243 vs M250) against the manufacturer's official datasheet before procurement, as packaging and mounting styles may vary across different production batches or sub-models. Confirm RoHS compliance status directly with the supplier documentation to ensure adherence to current environmental regulations.
Select this component for designs requiring an N-channel RF power transistor capable of 45 W output at frequencies up to 1.0 GHz. Ensure the circuit design supports the specified 28 V operating voltage and common source configuration. Verify that the thermal management solution can handle the 93 W power dissipation capability while maintaining junction temperatures within the specified -65 °C to +150 °C range.
The SD57045 belongs to STMicroelectronics' LdmoST family of lateral DMOS transistors. This series is engineered specifically for radio frequency power amplification tasks. The device represents a silicon-based solution optimized for linear amplification in communication infrastructure, distinguishing it from standard switching MOSFETs through its specialized RF performance characteristics and broadband frequency response.
Consult official substitution guides for compatible LdmoST family members. Verify pinout compatibility and thermal resistance values if considering alternative packages such as M250 variants.