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Product Detailed Parameters
- Description：IGBT 1200V 24A TO-3P
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：24 A
- Current - Collector Pulsed (Icm)：45 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 15A
- Power - Max：180 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：108 nC
- Td (on/off) @ 25°C：20ns/60ns
- Test Condition：600V, 15A, 20Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The SGH15N120RUFTU is a short circuit rated Insulated Gate Bipolar Transistor (IGBT) from Fairchild Semiconductor's RUFD series. It integrates an IGBT with a Fast Recovery Freewheeling Diode (FRD). Key electrical parameters include a collector-emitter voltage of 1200V and a continuous collector current of 15A at 25°C. The device features a low saturation voltage of 2.3V at 15A and a typical diode reverse recovery time of 65ns. It supports a maximum junction temperature of 175°C and offers short circuit ruggedness rated for 10µs at TC=100°C.
Feature Summary
- Short circuit ruggedness rated for 10 microseconds at case temperatures up to 100°C
- Integrated fast recovery freewheeling diode with typical reverse recovery time of 65ns
- Low saturation voltage for reduced conduction losses
- High-speed switching capability suitable for high-frequency applications
Applications
- AC and DC motor controls
- General purpose inverters
- Robotics and servo controls
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific suffix 'TU' against official Fairchild documentation to confirm tape-and-reel packaging status, as datasheets may list 'RUF' variants. Ensure component authenticity through authorized channels. Confirm RoHS compliance details directly with the manufacturer or certified distributors prior to procurement.
Selection Notes
Select this component for designs requiring integrated short circuit protection and fast recovery diodes in a single package. The 1200V rating suits high-voltage industrial applications. Compare the 15A current rating against thermal management capabilities. Verify gate drive requirements align with the specified VGE conditions for optimal switching performance.
Part Context
This part belongs to the SGH15N120RUF family of short circuit rated IGBTs. It shares core electrical characteristics with the SGH15N120RUF but may differ in packaging configuration indicated by the suffix. The RUFD series is designed to provide low conduction and switching losses while maintaining robustness against fault conditions.
Replacement Considerations
Direct substitutes within the same series include SGH15N120RUF. Cross-manufacturer replacements require matching 1200V rating, 15A current, and TO-264 package dimensions. Verify short circuit withstand time and diode recovery specifications to ensure functional equivalence.
