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The SGI02N120XKSA1 is a single NPT-technology IGBT transistor in a PG-TO-262-3-1 (I²PAK) package. It features a collector-emitter voltage of 1200 V and a DC collector current of 6.2 A at 25°C. The device offers a short circuit withstand time of 10 µs, an off-state energy loss of 0.08 mJ, and a maximum power dissipation of 62 W. Operating junction temperature ranges from -55°C to +150°C.
Verify the component against the official Infineon datasheet SGx02N120 Rev 2.3. Confirm the specific PG-TO-262-3-1 package marking GI02N120 matches the physical unit. Ensure the part meets RoHS compliance standards as specified in the manufacturer documentation.
Select this component for applications requiring robust NPT technology and high thermal stability. Consider the 1200 V rating and 6.2 A continuous current capacity for medium-power switching requirements. Evaluate the 10 µs short circuit tolerance for protection circuit design.
This component belongs to the SGx02N120 family of fast IGBTs manufactured by Infineon Technologies. The series includes variants such as SGP02N120 and SGD02N120, differentiated primarily by their respective lead frame packages while maintaining identical electrical characteristics.
Direct substitutes within the same family include SGP02N120XKSA1 and SGD02N120XKSA1. These parts share identical electrical specifications but utilize different package formats.