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Product Detailed Parameters
- Description：IGBT 600V 2.4A SOT-223-4
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：2.4 A
- Current - Collector Pulsed (Icm)：10:00 AM
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 1.2A
- Power - Max：2.1 W
- Switching Energy：30µJ (on), 13µJ (off)
- Input Type：Standard
- Gate Charge：9 nC
- Td (on/off) @ 25°C：15ns/80ns
- Test Condition：300V, 1.2A, 200Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223-4
- Grade：-
- Qualification：-
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Overview
The SGM2N60UFTF is an ultrafast Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, originally developed under the Fairchild Semiconductor brand. It utilizes a silicon technology platform and is housed in a surface-mount SOT-223 package designed for through-hole mounting compatibility. The device features a collector-emitter breakdown voltage of 600 V and a maximum continuous collector current of 2.4 A at 25°C case temperature. Key electrical parameters include a saturation voltage of 2.1 V at 1.2 A and a total switching loss of 43 µJ under standard test conditions.
Feature Summary
- Ultrafast switching performance optimized for high-speed applications
- Low saturation voltage to minimize conduction losses
- High input impedance characteristic typical of IGBT structures
Applications
- AC and DC motor controls
- General purpose inverters
- Robotics systems
- Servo controls
Procurement Notes
Verify component authenticity and datasheet revision status due to historical manufacturing transitions between Fairchild Semiconductor and onsemi. Confirm package marking codes align with the SOT-223 form factor. Ensure storage and handling procedures comply with moisture sensitivity levels specified in the original product documentation.
Selection Notes
Select this component for low-power switching circuits requiring fast turn-off characteristics within a 600 V rating. Evaluate thermal management requirements carefully as the SOT-223 package has limited power dissipation capabilities compared to larger through-hole packages. Consider gate resistance values to optimize the trade-off between switching speed and electromagnetic interference.
Part Context
This part belongs to the UF series of ultrafast IGBTs from Fairchild/Onsemi, designed specifically for applications demanding reduced switching times. It serves as a discrete solution for medium-voltage power conversion tasks where compact surface-mount packaging is preferred over traditional leaded packages like TO-220.
Replacement Considerations
Direct pin-compatible replacements may be limited due to the specific SOT-223 IGBT footprint. Verify that alternative devices match the 600 V rating, 2.4 A current capacity, and switching speed requirements before substitution.
