SH8J31GZETB

$1.38

Description：MOSFET 2P-CH 60V 4.5A 8SOP
Series：-

SKU:3eb01d77441f Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 60V 4.5A 8SOP
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：-
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：4.5A
Rds On (Max) @ Id, Vgs：70mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2500pF @ 10V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

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SH8J31GZETB

Overview

The SH8J31GZETB is a dual P-channel MOSFET array manufactured by Rohm Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source voltage (VDSS) of -60V and a continuous drain current (ID) of ±4.5A at 25°C. The device has a maximum power dissipation (PD) of 2.0W and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a gate threshold voltage (VGS(th)) ranging from -1.0V to -3.0V at ID = -1mA, and a static on-resistance (RDS(on)) with a maximum value of 70mΩ at VGS = -10V and ID = -4.5A. Total gate charge (Qg) is typically 40nC.

Feature Summary

Low on-state resistance for efficient switching performance
Compact SOP-8 surface mount package design
Lead-free plating compliant with RoHS directives
Halogen-free material composition

Applications

Motor drive circuits
General-purpose switching applications

Procurement Notes

Verify the specific ordering suffix TB against the required packaging configuration before purchase. Confirm that the component status aligns with current project requirements, as availability may be subject to manufacturer updates. Ensure all environmental compliance certifications match the target market regulations.

Selection Notes

Select this component for designs requiring dual P-channel isolation in a compact footprint. Evaluate thermal management strategies carefully, as the 2.0W power dissipation rating requires adequate PCB copper area or heatsinking to maintain junction temperatures within safe limits during continuous operation.

Part Context

This part belongs to Rohm's middle-power MOSFET lineup designed for standard electronic equipment. It serves as a complementary solution to N-channel arrays, enabling half-bridge or full-bridge configurations in motor control and power switching topologies without requiring separate discrete components.