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The SH8K37GZETB is a dual N-channel power MOSFET array manufactured by Rohm Semiconductor. It features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 5.5A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 46mΩ at Vgs=10V and Id=5.5A. Key electrical parameters include a gate charge (Qg) of 9.7nC at 10V, an input capacitance (Ciss) of 500pF at 30V, and a threshold voltage (Vgs(th)) of 2.7V max at 100µA. Power dissipation is rated at 1.4W (Ta), with a maximum junction temperature of 150°C. It is housed in an 8-SOP surface-mount package.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS3 compliance status and check for obsolete status warnings, as the part may be restricted for new designs. Ensure packaging type matches project requirements, such as tape and reel quantities.
Select this component when a dual N-channel MOSFET with 60V rating and approximately 5.5A current capacity is required. Consider the 46mΩ Rds(on) at 10V drive for efficiency needs. Verify that the 8-SOP package fits the PCB layout constraints and thermal management strategy for 1.4W dissipation.
This part belongs to the SH8K37 series of dual N-channel MOSFETs from Rohm. It shares the base model number SH8K37 but includes specific suffixes indicating packaging and variant details. It is distinct from other series like SH8J31 (P-channel) or single-channel variants.
Check for direct substitutes within the SH8K37 family or equivalent dual N-channel MOSFETs with matching 60V/5.5A ratings and 8-SOP packages. Verify pin compatibility and electrical parameter equivalence before substitution.