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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 7A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Rds On (Max) @ Id, Vgs：24mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：11.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：600pF @ 10V
- Power - Max：2W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8K3TB1 is a dual N-channel MOSFET manufactured by Rohm Semiconductor, designed for low-voltage drive applications. It features a 30V drain-source voltage (V_DSS) and a continuous drain current (I_D) of 7.0A. The device typically exhibits an on-resistance (R_DS(on)) of 0.025Ω at a gate drive voltage of 4V. Packaged in an SOP-8 surface-mount format with dimensions of 6.0x5.0mm, it supports a power dissipation capacity suitable for compact switching circuits. The component is supplied in tape-and-reel packaging with a unit quantity of 2500.
Feature Summary
- Dual N-channel configuration integrated into a single compact package
- Optimized for low-voltage gate drive operations at 4V
- Low on-resistance characteristics to minimize conduction losses
Applications
- General-purpose switching circuits
- Motor driver interfaces
- Power management modules
Procurement Notes
Verify the specific ordering suffix TB1 to confirm the tape-and-reel packaging configuration and unit quantity of 2500 units. Ensure compliance with RoHS standards as indicated in the official documentation. Confirm that the component status aligns with current production availability for existing customer support rather than new design recommendations.
Selection Notes
Select this component when a dual N-channel MOSFET with a 30V rating and 7.0A current capacity is required. The 4V drive capability makes it suitable for logic-level control applications. Consider the SOP-8 package size for space-constrained designs requiring surface-mount technology.
Part Context
The SH8K3 series represents Rohm's lineup of dual N-channel MOSFETs optimized for low-voltage driving. The SH8K3TB1 specifically denotes the tape-and-reel variant within this family. This series is engineered to provide efficient switching performance in compact form factors, supporting various industrial and consumer electronics applications.
Replacement Considerations
The SH8KA2TB1 is listed as a similar level replacement with the same SOP-8 package. It offers a slightly higher drain current of 8.0A while maintaining the 30V V_DSS rating. Verify pin compatibility and thermal characteristics before substitution.
