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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Rds On (Max) @ Id, Vgs：80mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：125pf @ 15V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8KA1GZETB is a dual N-channel power MOSFET manufactured by Rohm Semiconductor, housed in an 8-SOP surface-mount package. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 4.5A at 25°C. The device exhibits a typical on-resistance (Rds(on)) of 0.088Ω at Vgs=4.5V and 0.057Ω at Vgs=10V. Key electrical parameters include a total gate charge (Qg) of 1.5nC, a drive voltage of 4.5V, and a power dissipation rating of 2.7W. The component supports a storage temperature range from -55°C to 150°C.
Feature Summary
- Dual N-channel configuration for efficient switching applications
- Low on-resistance optimized for low-voltage drive conditions
- Surface-mount SOP8 packaging for compact board integration
Applications
- Switching circuits
- Motor drivers
Procurement Notes
Verify the specific ordering suffix GZETB against the manufacturer's official documentation to ensure correct tape-and-reel packaging specifications. Confirm RoHS compliance status and check for any design-life notices or obsolescence warnings directly from Rohm Semiconductor before finalizing procurement plans.
Selection Notes
Select this component for designs requiring a 30V dual N-channel MOSFET with low gate charge. Ensure the driving circuit can provide the specified 4.5V drive voltage to achieve the rated 4.5A current capability. Verify that the thermal management strategy accommodates the 2.7W power dissipation limit within the operating environment.
Part Context
This part belongs to Rohm's standard-grade power MOSFET lineup. It is distinct from automotive-qualified variants and is generally not recommended for use in automotive equipment according to manufacturer guidelines. The SH8KA1 series provides a balance of performance and cost for general-purpose industrial and consumer electronics applications.
Replacement Considerations
The SH8K5 is listed as a similar level replacement with the same SOP8 package, though it offers different current ratings (3.5A vs 4.5A) and resistance characteristics. Verify pin compatibility and electrical parameter margins when substituting.
