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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：28mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：330pF @ 15V
- Power - Max：2.8W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8KA2GZETB is a dual N-channel power MOSFET manufactured by ROHM Semiconductor in an SOP-8 surface-mount package. It features a drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of ±8.0A at 25°C. The device exhibits a maximum static on-resistance (RDS(on)) of 28mΩ at VGS=10V and ID=8A, or 43mΩ at VGS=4.5V and ID=6A. Total gate charge (Qg) is typically 8.0nC at VGS=10V and 4.1nC at VGS=4.5V. Power dissipation reaches 2.8W on a ceramic board and 2.0W on a copper board. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Low on-state resistance for efficient switching performance
- Compact SOP-8 surface mount package design
- Lead-free plating compliant with RoHS standards
- Halogen-free material composition
Applications
- General purpose switching applications
- Motor drive circuits
- Power management modules
Procurement Notes
Verify the specific ordering suffix GZETB against official documentation to confirm packaging details such as tape width and reel size. Confirm that the component meets required environmental standards including lead-free and halogen-free specifications before finalizing procurement plans.
Selection Notes
Select this component for designs requiring a 30V dual N-channel configuration within a small footprint. Ensure the driving circuit provides sufficient gate voltage to achieve the lowest RDS(on) values. Verify thermal management capabilities based on the specified power dissipation ratings under expected ambient conditions.
Part Context
This part belongs to the SH8KA2 series of 30V dual N-channel power MOSFETs. It shares the same electrical characteristics and package outline as the SH8KA2TB1 variant, differing primarily in the specific packaging code used for taping and shipping logistics.
Replacement Considerations
SH8KA2TB1
FAQ
What is the maximum pulsed drain current for the SH8KA2?
The maximum pulsed drain current (IDP) is ±16A, measured with a pulse width of 10μs and a duty cycle of 1%.
Does the SH8KA2 include body diodes?
Yes, it includes intrinsic body diodes with a continuous forward current rating of 1.67A and a pulse forward current rating of 16A.
What is the typical input capacitance (Ciss)?
The typical input capacitance is 330pF, measured at VGS=0V.
