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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 9A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：9A
- Rds On (Max) @ Id, Vgs：21.4mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：15.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：640pF @ 15V
- Power - Max：3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8KA4TB is a dual N-channel power MOSFET from Rohm Semiconductor, designed for switching and motor drive applications. It features an SOP-8 surface-mount package with eight terminals. Key electrical parameters include a drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 9A. The typical on-resistance (R_DS(on)) is 0.0222Ω at V_GS = 4.5V and 0.0165Ω at V_GS = 10V. Total gate charge (Q_g) is typically 7.9nC, with a power dissipation rating of 3W. The device operates within a storage temperature range of -55°C to 150°C and complies with RoHS standards.
Feature Summary
- Dual N-channel configuration optimized for motor drive and switching circuits
- Low on-resistance characteristics for efficient power handling
- Compact SOP-8 surface mount package design
- Lead-free plating compliant with RoHS directives
Applications
- Motor drive systems
- General switching applications
Procurement Notes
Verify the exact ordering suffix against official Rohm documentation, as variations such as SH8KA4TB1 may indicate specific taping or packaging configurations. Confirm supply status, as this component is classified as a standard-grade product not recommended for automotive equipment. Ensure compatibility with required surface-mount assembly processes and verify RoHS compliance requirements for the target application environment before procurement.
Selection Notes
Select the SH8KA4TB for applications requiring a 30V dual N-channel MOSFET in an SOP-8 package. Consider the 9A drain current and low R_DS(on) values when designing for motor drives or high-efficiency switching circuits. Evaluate thermal management needs based on the 3W power dissipation rating. Compare gate charge specifications against driver capabilities to ensure adequate switching performance. Verify that the non-automotive classification aligns with the intended end-use environment.
Part Context
The SH8KA4 series represents Rohm's standard-grade power MOSFET lineup, focusing on cost-effective solutions for general industrial and consumer electronics. These devices utilize silicon technology to provide reliable performance in compact packages. The SOP-8 form factor allows for space-efficient PCB layouts while maintaining sufficient current handling capabilities for moderate-power applications. This series is distinct from automotive-grade offerings and is intended for standard commercial use cases.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult official Rohm documentation for approved alternatives or cross-reference with similar dual N-channel MOSFETs in SOP-8 packages, ensuring matching electrical parameters and pinout compatibility.
