SH8KB5TB1

Overview

The SH8KB5TB1 is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source voltage (V_DSS) rating of 40 V and a continuous drain current (I_D) of 4.5 A. The device exhibits low on-resistance values of 0.065 Ω at V_GS = 4.5 V and 0.042 Ω at V_GS = 10 V. Key electrical parameters include a total gate charge (Q_g) of 1.8 nC, a power dissipation (P_D) capacity of 2 W, and a typical reverse transfer capacitance (trr) of 18 ns. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

• Dual N-channel configuration integrated into a compact SOP-8 surface-mount package for space-constrained designs.
• Low on-resistance characteristics optimized for efficient switching performance and reduced conduction losses.
• Enhanced thermal stability supporting operation across a wide industrial temperature range.

Applications

• General-purpose switching circuits requiring low profile packaging.
• Motor driver applications utilizing dual channel control.
• DC-DC converter topologies benefiting from fast switching speeds.

Procurement Notes

Verify the specific ordering suffix TB1 to confirm tape-and-reel packaging quantities of 2500 units per reel. Ensure compatibility with standard SOP-8 footprint dimensions during PCB layout. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Validate that the application environment remains within the specified storage and operating temperature limits defined in the datasheet.

Selection Notes

Select this component when a dual N-channel topology is required in an 8-pin surface-mount form factor. The 40 V rating suits low-voltage systems, while the 4.5 A current capability supports moderate load requirements. Consider the 0.065 Ω R_DS(on) at 4.5 V drive for logic-level interface compatibility. Evaluate thermal management needs given the 2 W power dissipation limit in the small outline package.

Part Context

This part belongs to ROHM's series of dual power MOSFETs designed for high-efficiency power management. The SH8KB5 variant specifically targets cost-sensitive applications needing reliable switching performance. It complements other devices in the family offering different voltage or current ratings while maintaining consistent pinout and package geometry for design flexibility.

Replacement Considerations

Direct substitutes must match the dual N-channel configuration, 40 V V_DSS, and SOP-8 package. Verify equivalent R_DS(on) and I_D specifications to ensure circuit performance parity. Check for identical pin assignments to avoid PCB redesign. Confirm availability of the TB1 taping format if automated assembly is utilized.