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The SH8KE5TB1 is a dual N-channel power MOSFET from Rohm Semiconductor, housed in an SOP8 surface-mount package. It features a drain-source voltage (V_DSS) of 100V and a continuous drain current (I_D) of 2.5A. The device exhibits low on-resistance, with typical values of 0.197Ω at V_GS=4.5V and 0.154Ω at V_GS=10V. Total gate charge (Q_g) is typically 1.7nC, and power dissipation (P_D) is rated at 2W. The component operates within a storage temperature range of -55°C to 150°C and has a package size of 6.0x5.0mm with a thickness of 1.75mm.
Verify the specific ordering suffix TB1 against the manufacturer's current datasheet to ensure correct packaging and revision status. Confirm RoHS compliance and lead-free plating requirements match project specifications. Check for any design-in restrictions regarding automotive use, as this product is classified as standard grade and not recommended for automotive equipment.
Select the SH8KE5TB1 when a dual N-channel MOSFET with 100V rating and moderate current handling is required. Consider its low gate charge for efficiency in high-frequency switching. Ensure the application does not require automotive qualification, as this part is designated for standard-grade usage only.
The SH8KE5TB1 belongs to Rohm's series of low on-resistance power MOSFETs designed for general-purpose switching and motor control. It utilizes a compact SOP8 package to provide dual channel functionality in a small footprint, supporting modern electronics' demand for miniaturization without sacrificing electrical performance.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters if considering alternative dual N-channel MOSFETs from other manufacturers.