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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 9A/7A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：9A, 7A
- Rds On (Max) @ Id, Vgs：21mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：8.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：630pF @ 10V
- Power - Max：2W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8M14TB1 is a complementary power MOSFET manufactured by ROHM Semiconductor, integrating N-channel and P-channel elements within a single SOP-8 package. It features a drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 9A. The typical on-resistance (R_DS(on)) is 0.028Ω at a drive voltage of 4V. Designed for surface mount applications, the device supports a power dissipation of 2W and operates within a storage temperature range of -55°C to 150°C.
Feature Summary
- Complementary N-channel and P-channel configuration in a compact SOP-8 package
- Low on-resistance optimized for 4V drive voltage applications
- Lead-free plating compliant with RoHS directives
Applications
- General switching applications
- Motor driver circuits
- Power management modules
Procurement Notes
Verify the specific ordering suffix TB1 to ensure correct packaging format. Confirm RoHS compliance status and lead-free plating requirements against project specifications. Check supply status as products may transition between recommended and obsolete categories. Validate package dimensions and terminal count against PCB footprint designs prior to procurement.
Selection Notes
Select this component for low-voltage applications requiring 30V breakdown and high current handling up to 9A. Ensure the driving circuit provides sufficient gate voltage to achieve the specified 0.028Ω on-resistance. Consider thermal management capabilities given the 2W power dissipation limit in the SOP-8 package. Verify compatibility with surface mount assembly processes.
Part Context
This part belongs to the SH8 series of complementary MOSFETs from ROHM, designed for space-constrained power applications. It shares the SOP-8 form factor with other variants like SH8M8 and SH8MC4 but differs in voltage ratings and current capacities. The series targets general-purpose switching needs where size reduction and efficiency are prioritized over automotive-grade robustness.
Replacement Considerations
SH8MA3TB1 is listed as a similar level replacement with the same package and pinout. Verify electrical parameters such as drain current and on-resistance match application requirements before substitution.
