SH8M24GZETB

$1.10

Description：MOSFET N/P-CH 45V 6A 8SOP
Series：-

SKU:b6eee247e193 Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 45V 6A 8SOP
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：45V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Rds On (Max) @ Id, Vgs：46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：9.6nC @ 5V, 18.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：550pF @ 10V, 1700pF @ 10V
Power - Max：1.4W (Ta)
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

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SH8M24GZETB

Overview

The SH8M24GZETB is a complementary power MOSFET manufactured by ROHM Semiconductor, integrating one N-channel and one P-channel transistor within an SOP-8 surface-mount package. The device features a drain-source voltage rating of ±45V and supports continuous drain currents of ±6A. Maximum on-state resistance values are specified at 46mΩ for the N-channel and 63mΩ for the P-channel. Total gate charge reaches up to 18.2nC for the P-channel unit. The component operates across a junction temperature range from -55°C to +150°C with a total power dissipation capacity of 3.1W.

Feature Summary

Complementary dual-transistor configuration in a compact SOP-8 surface mount package
Low on-state resistance optimized for efficient switching performance
Halogen-free construction compliant with RoHS standards

Applications

Motor driver circuits
Power supply switching stages
General-purpose electronic equipment

Procurement Notes

Verify the current supply status before initiating procurement activities. Official documentation indicates this specific part number may be designated as not recommended for new designs. Confirm availability through authorized distributors or direct manufacturer channels to ensure compliance with current production lifecycles.

Selection Notes

Evaluate thermal resistance requirements based on the intended mounting substrate, such as FR4 or ceramic boards. Ensure gate drive voltages remain within the ±20V absolute maximum ratings. Consider the distinct electrical characteristics between the integrated N-channel and P-channel units when designing complementary bridge configurations.

Part Context

This component belongs to the SH8M24 series of 45V complementary power MOSFETs. It utilizes micro-processing technology to achieve low on-resistance within a small footprint. The series addresses market demands for various power levels and form factors, specifically targeting applications requiring efficient dual-transistor solutions in compact packages.