SH8M24TB1

Overview

The SH8M24TB1 is a complementary power MOSFET manufactured by ROHM Semiconductor, featuring an N-channel and P-channel configuration within a single SOP-8 surface-mount package. It operates with a drain-source voltage of 45 V and supports a continuous drain current of 6 A. The device exhibits low on-resistance values of 46 mΩ at 4 V gate drive and 41 mΩ at 4.5 V. Total gate charge is specified at 6.8 nC, while power dissipation reaches 3.1 W. The component functions in enhancement mode across a temperature range of -55°C to +150°C.

Feature Summary

• Complementary N-channel and P-channel integration for simplified circuit design
• Low on-resistance achieved through micro-processing technology
• Surface-mount SOP-8 packaging suitable for space-constrained applications

Applications

• Motor driver circuits
• General-purpose switching applications
• Power management systems requiring dual polarity control

Procurement Notes

Verify the specific ordering suffix TB1 against official ROHM documentation to confirm tape-and-reel packaging and quantity specifications. Confirm RoHS compliance status via the manufacturer's latest datasheet before procurement. Ensure supply status aligns with project requirements as availability may vary.

Selection Notes

Select this component when a compact dual MOSFET solution is required for 45V applications. The 4V drive capability makes it suitable for logic-level control interfaces. Verify thermal management needs given the 3.1W power dissipation rating in the SOP-8 package.

Part Context

This part belongs to the SH8M24 series of complementary power MOSFETs from ROHM. The series utilizes micro-processing techniques to minimize on-resistance. The SOP-8 variant offers a balance between performance and footprint for industrial and consumer electronics.

Replacement Considerations

The SP8M24HZG is listed as a recommended replacement with identical pinout and package dimensions. Verify electrical parameter equivalence before substitution.