SH8M3TB1

Overview

The SH8M3TB1 is a complementary power MOSFET manufactured by Rohm Semiconductor, featuring an N-channel and P-channel pair within a single SOP-8 surface-mount package. The device supports a drain-source voltage (V_DSS) of 30V. Typical on-resistance (R_DS(on)) values are specified at various gate drive voltages: 0.025Ω at 4V, 0.023Ω at 4.5V, and 0.016Ω at 10V. The continuous drain current (I_D) rating is 7.0A. Total gate charge (Q_G) is typically 3.9nC, with a power dissipation (P_D) capacity of 2W. The component operates within a storage temperature range of -55°C to 150°C.

Feature Summary

• Complementary N+P configuration in a compact SOP-8 package
• Low on-resistance optimized for switching efficiency
• Surface mount mounting style suitable for automated assembly

Applications

• General switching applications
• Motor driver circuits
• Power management modules

Procurement Notes

Verify the specific ordering suffix TB1 to confirm tape-and-reel packaging quantities. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the component meets environmental regulations for the target market before procurement.

Selection Notes

Select this part for low-voltage (30V) applications requiring complementary N/P channel pairs. Compare R_DS(on) at the specific system gate drive voltage against alternatives. Verify thermal management requirements given the 2W power dissipation limit in the SOP-8 package.

Part Context

This component belongs to Rohm's SH8 series of complementary power MOSFETs. It shares the SOP-8 footprint with other variants like SH8MA3 and SH8M8 but differs in voltage ratings and current capabilities. It is designed as a drop-in replacement for similar 30V complementary MOSFETs in existing designs.

Replacement Considerations

SH8MA3 is listed as a similar level alternative with the same SOP-8 package. Verify pin compatibility and electrical parameter differences before substitution.