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Product Detailed Parameters
- Description：MOSFET N/P-CH 100V 3A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta), 2.5A (Ta)
- Rds On (Max) @ Id, Vgs：170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：8.5nC @ 5V, 12.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：610pF @ 25V, 1550pF @ 25V
- Power - Max：1.4W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8M51GZETB is a dual complementary power MOSFET array manufactured by ROHM Semiconductor, integrating one N-channel and one P-channel transistor within an 8-pin SOP (HSOP-8) surface-mount package. The device supports a drain-source voltage of 100V with continuous drain currents rated at 4.5A for the N-channel and 3A for the P-channel. Key electrical parameters include a typical on-resistance of 170mΩ for the N-channel and 290mΩ for the P-channel at VGS=10V. Total gate charges are specified as 15nC for the N-channel and 26.2nC for the P-channel. The component operates within a temperature range of -55°C to +150°C and features a maximum power dissipation of 7W.
Feature Summary
- Integrates complementary N-channel and P-channel MOSFETs in a single compact surface-mount package.
- Optimized for low on-resistance to enhance switching efficiency in power applications.
- Designed for high-speed switching with defined rise, fall, and delay times.
Applications
- DC-DC converter circuits
- Motor driver interfaces
- Power management modules
Procurement Notes
Verify the specific suffix GZETB against the manufacturer's latest datasheet to confirm pinout compatibility and RoHS status. Confirm availability status as this part may be subject to production lifecycle changes or obsolescence notices from ROHM Semiconductor.
Selection Notes
Select this component when a matched complementary pair is required for bridge or half-bridge configurations. Ensure the 100V rating and 4.5A/3A current limits align with the circuit's peak load requirements. Verify that the SOP-8 thermal performance meets the system's heat dissipation needs.
Part Context
This part belongs to ROHM's series of dual complementary MOSFET arrays designed for space-constrained power electronics. It serves as a direct replacement for older variants like the SP8M51TB1, offering updated packaging and potentially improved electrical characteristics while maintaining functional compatibility.
Replacement Considerations
The SH8M51GZETB is identified as a direct replacement for the obsolete SP8M51TB1. Verify pin-to-pin compatibility before substitution.
FAQ
What is the maximum power dissipation for the SH8M51GZETB?
The maximum power dissipation is 7W.
Does the SH8M51GZETB support automotive applications?
Specific automotive qualification data is not provided in the general specifications; verify with the manufacturer for AEC-Q101 compliance if required.
