SH8M70TB1

$0.48

Description：MOSFET N/P-CH 250V 3A/2.5A 8SOP
Series：-

SKU:c1e7144817c7 Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 250V 3A/2.5A 8SOP
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：250V
Current - Continuous Drain (Id) @ 25°C：3A, 2.5A
Rds On (Max) @ Id, Vgs：1.63Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：5.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：180pF @ 25V
Power - Max：2W
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

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SH8M70TB1

Overview

The SH8M70TB1 is a silicon N-channel and P-channel complementary MOSFET in an SOP8 surface-mount package. It features low on-resistance and built-in gate-source protection diodes. The device supports a drain-source voltage of 250V for the N-channel and -250V for the P-channel. Continuous drain current ratings are 3A for the N-channel and -2.5A for the P-channel. Typical static drain-source on-state resistance is 1.63Ω at VGS=10V for the N-channel and 2.2Ω at VGS=-10V for the P-channel. Total gate charge is typically 5.2nC for the N-channel and 2.5nC for the P-channel. Power dissipation is rated at 2.0W total, with a storage temperature range of -55°C to +150°C.

Feature Summary

Complementary N-channel and P-channel configuration in a single small SOP8 surface mount package.
Built-in gate-source protection diodes to guard against static electricity.
Low on-resistance characteristics suitable for power switching applications.

Applications

Power switching circuits
DC/DC converters

Procurement Notes

Verify the specific ordering suffix TB1 corresponds to the taping packaging format with a basic ordering unit of 2500 pieces. Confirm RoHS compliance status and ensure the component meets general-use electronic equipment requirements rather than automotive or high-reliability standards.

Selection Notes

Select this component for designs requiring a 250V breakdown voltage in a compact SOP8 footprint. Ensure the drive voltage aligns with the specified 10V threshold for optimal RDS(on) performance. Consider the 2.0W total power dissipation limit and derating requirements based on ambient operating temperatures.

Part Context

This part belongs to ROHM's 10V Drive Nch+Pch MOSFET series. It is designed as a standard-grade product intended for general-purpose electronic equipment such as audio-visual devices, office automation, and communication equipment. It is not recommended for automotive applications.