SI1024X-T1-E3

Overview

The Vishay Siliconix SI1024X-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SC-89 (SOT-563) surface-mount package. It features a drain-source voltage of 20 V and a maximum continuous drain current of 515 mA at 25 °C. The device offers low on-resistance values of 0.7 Ω at VGS = 4.5 V, 0.85 Ω at VGS = 2.5 V, and 1.25 Ω at VGS = 1.8 V. Designed for high-speed switching with a turn-on time of 10 ns, it includes gate-source ESD protection rated at 2000 V. Operating junction temperatures range from -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration within a compact footprint
• TrenchFET power MOSFET architecture for low on-resistance
• High-speed switching capability with fast turn-on times
• Integrated gate-source electrostatic discharge protection

Applications

• Drivers for relays, solenoids, lamps, hammers, displays, and memories
• Battery-operated systems requiring low-voltage operation
• Power supply converter circuits
• Load and power switching in cell phones and pagers

Procurement Notes

Verify the component status before procurement as the part may be discontinued or subject to obsolescence notifications. Confirm that the specific ordering suffix matches the required lead-free and halogen-free specifications. Ensure compatibility with the SC-89 package dimensions and recommended pad layouts during design-in. Validate thermal performance against absolute maximum ratings for the intended application environment.

Selection Notes

Select this component for applications requiring dual N-channel switching in a minimal space-constrained layout. Evaluate the on-resistance requirements at specific gate drive voltages, particularly for low-voltage battery systems operating at 1.8 V or 2.5 V. Consider the 20 V drain-source voltage limit and the 515 mA continuous current rating when sizing for load conditions. Verify that the thermal dissipation capabilities meet the system's power requirements under steady-state and pulsed conditions.

Part Context

This component belongs to the Vishay Siliconix Si1024X series of dual N-channel MOSFETs. It utilizes the SC-89 (SOT-563) package, which provides a very small footprint suitable for portable electronics. The device is part of the broader TrenchFET family, known for optimized on-resistance and switching performance in low-voltage applications.

Replacement Considerations

The datasheet lists SI1024X-T1-GE3 as the lead-free and halogen-free equivalent. Verify pinout compatibility and electrical parameters if considering alternative dual N-channel MOSFETs in similar packages.