SI1025X-T1-GE3

Overview

The Vishay Siliconix SI1025X-T1-GE3 is a P-channel TrenchFET power MOSFET rated for a drain-source voltage of -60 V. It features a low on-resistance of 4 Ω at VGS = -10 V and a typical gate threshold voltage of -2 V. The device supports a continuous drain current of -200 mA and a pulsed drain current of -650 mA, with a maximum power dissipation of 280 mW at 25 °C. Packaged in an SC-89 (SOT-563F) surface-mount format, it exhibits fast switching speeds with typical turn-on and turn-off times of 20 ns and 35 ns respectively.

Feature Summary

• Utilizes TrenchFET technology to achieve low on-resistance and high-speed switching performance.
• Features a miniature SC-89 package designed to minimize printed circuit board area requirements.
• Includes gate-source electrostatic discharge protection rated at 2000 V.

Applications

• Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
• Battery operated systems
• Power supply converter circuits
• Solid state relays

Procurement Notes

Verify the component against the official Vishay datasheet Document Number 71433 to confirm specifications. Ensure the ordering suffix matches the lead-free and halogen-free requirement specified for the GE3 variant. Cross-reference the marking code 'D' and the SC-89 package dimensions to validate physical compatibility during procurement.

Selection Notes

Select this component for applications requiring a compact P-channel switch with a -60 V rating. Evaluate the 4 Ω on-resistance against thermal constraints, as the 280 mW power dissipation limit restricts continuous current handling. Confirm that the -2 V typical threshold voltage aligns with the available logic drive levels in the target circuit design.

Part Context

This part belongs to the Si1025X series of Vishay Siliconix P-channel MOSFETs. It utilizes the SC-89 package, also identified as SOT-563F, which provides a six-lead configuration suitable for space-constrained surface mount designs. The product complies with RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free definitions.

Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the source documentation.

FAQ

What is the typical gate threshold voltage for the SI1025X?

The typical gate threshold voltage (VGS(th)) is -2 V, with a range from -1 V to -3.0 V under standard test conditions.

Does the SI1025X support high-side switching?

Yes, the datasheet explicitly lists high-side switching as a key feature of the device.

What is the maximum gate-source voltage rating?

The absolute maximum rating for the gate-source voltage (VGS) is ±20 V.