SI1033X-T1-E3

Overview

The SI1033X-T1-E3 is a single N-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in an SOT-23 (T1) surface-mount package. The device features a drain-source breakdown voltage of 30 V and a continuous drain current rating of 5.7 A at 25°C. Key electrical parameters include a maximum on-resistance of 28 milliohms when driven with a gate-source voltage of 10 V. The component operates within a temperature range from -55°C to +150°C junction temperature.

Feature Summary

• Utilizes TrenchFET power transistor technology for optimized performance.

Applications

• DC-DC converters
• Power management circuits
• Load switching applications

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the SOT-23 package dimensions match your PCB footprint requirements. Ensure that thermal management strategies account for the specified power dissipation limits under your intended operating conditions.

Selection Notes

Select this component for low-voltage, high-current applications requiring efficient switching. Compare the 28 milliohm on-resistance against system loss requirements. Verify that the 30 V drain-source voltage provides adequate headroom for your supply rails. Consider the SOT-23 package size constraints relative to available board space.

Part Context

This part belongs to the SI1 series of N-channel MOSFETs from Vishay Siliconix. These devices are designed for general-purpose power switching applications. The T1 suffix indicates the SOT-23 surface-mount package configuration. The E3 suffix denotes lead-free construction compliant with RoHS standards.

Replacement Considerations

Consult official replacement guides for direct equivalents. Verify pinout compatibility and electrical parameter margins before substituting. Cross-reference with similar TrenchFET devices in the same voltage and current class.