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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.18A SC89
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：180mA
- Rds On (Max) @ Id, Vgs：5Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.75nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SC-89 (SOT-563F)
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI1034X-T1-E3 is an N-channel 20 V (D-S) MOSFET utilizing TrenchFET technology. It features a low on-resistance of 5 Ω at VGS = 4.5 V and a typical gate threshold voltage of 0.9 V, enabling operation at 1.5 V. The device supports a continuous drain current of 180 mA at TA = 25 °C and offers fast switching with a typical turn-on delay time of 50 ns. Packaged in a SC-89 (SOT-563F) surface-mount configuration, it includes gate-source ESD protection rated at 2000 V.
Feature Summary
- TrenchFET Power MOSFET architecture optimized for low-side switching applications
- Capable of 1.5 V logic-level operation with low offset error voltage
- Integrated gate-source electrostatic discharge protection up to 2000 V
Applications
- Drivers for relays, solenoids, lamps, hammers, displays, memories
- Battery operated systems
- Power supply converter circuits
- Load and power switching for cell phones and pagers
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The datasheet lists Si1034X-T1-GE3 as the lead-free and halogen-free variant. Confirm that the -E3 suffix aligns with your project's environmental compliance requirements and matches the manufacturer's current production specifications.
Selection Notes
Select this component for low-voltage applications requiring efficient switching at 1.5 V or 1.8 V. Ensure the design accommodates the 5 Ω on-resistance at VGS = 4.5 V to manage power dissipation within the 280 mW limit at 25 °C ambient temperature. Validate thermal performance for high-duty cycle operations using the normalized transient impedance curves.
Part Context
This part belongs to the Vishay Siliconix Si10 series of N-channel MOSFETs designed specifically for ultra-low voltage operation. The SC-89 package provides a compact footprint suitable for space-constrained portable electronics. The device utilizes silicon technology compliant with RoHS directives.
Replacement Considerations
Check for direct equivalents within the Si10 series such as the Si1032X or Si1054X if pinout compatibility is required. Verify that any substitute maintains the 20 V drain-source voltage rating and meets the 1.5 V operational threshold requirements.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum gate-source voltage (VGS) is ± 5 V.
How does the on-resistance vary with gate voltage?
RDS(on) is specified as 5 Ω at VGS = 4.5 V, 7 Ω at VGS = 2.5 V, 9 Ω at VGS = 1.8 V, and 10 Ω at VGS = 1.5 V.
Is the device halogen-free?
Yes, the Si1034X is halogen-free according to IEC 61249-2-21 definition.
