SI1034X-T1-GE3

Overview

The Vishay Siliconix SI1034X-T1-GE3 is an N-channel 20 V (D-S) MOSFET utilizing TrenchFET technology. It features a low on-resistance of 5 Ω at VGS = 4.5 V and a typical gate threshold voltage of 0.9 V, enabling operation at 1.5 V. The device supports a continuous drain current of 180 mA at TA = 25 °C and dissipates up to 250 mW. Packaged in a compact SC-89 (SOT-563F) surface-mount housing with six leads, it offers fast switching speeds with typical turn-on delay and rise times of 50 ns and 25 ns respectively.

Feature Summary

• TrenchFET Power MOSFET architecture designed for low-side switching applications
• Capable of 1.5 V operation with low offset error voltage
• Gate-source ESD protection rated at 2000 V
• Halogen-free construction compliant with IEC 61249-2-21 definition

Applications

• Drivers for relays, solenoids, lamps, hammers, displays, and memories
• Battery operated systems
• Power supply converter circuits
• Load and power switching for cell phones and pagers

Procurement Notes

Verify the component against the official Vishay datasheet document number 71427 to confirm technical specifications. Ensure the ordering suffix -T1-GE3 matches the required reel packaging and lead-free halogen-free compliance status. Cross-reference the marking code 'L' and SC-89 package dimensions during physical inspection to validate authenticity and correct part identification.

Selection Notes

Select this component for low-voltage battery-powered designs requiring efficient low-side switching. The 5 Ω on-resistance at 4.5 V makes it suitable for driving small loads like LEDs or relays directly from microcontrollers. Consider the 250 mW power dissipation limit and thermal impedance characteristics when designing PCB layouts for sustained operation.

Part Context

This device belongs to the Si1034X series of N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes advanced TrenchFET technology to achieve low on-resistance and fast switching performance within a minimal footprint. The product line is engineered specifically for portable electronics and battery-operated applications where space constraints and low voltage efficiency are critical design parameters.

Replacement Considerations

Direct substitutes must match the 20 V rating, N-channel configuration, and SC-89 package. Verify that alternative components offer comparable on-resistance at similar gate voltages and maintain equivalent thermal and electrical characteristics for seamless integration into existing circuit designs.