SI1539CDL-T1-BE3

Overview

The Vishay Siliconix SI1539CDL is a dual N- and P-channel MOSFET in a SOT-363 (SC-70) package. It features TrenchFET technology with a 30 V drain-source voltage rating for both channels. The N-channel offers an on-resistance of 0.388 Ω at VGS = 10 V, while the P-channel provides 0.890 Ω under identical conditions. Continuous drain currents are rated at 0.7 A for the N-channel and -0.5 A for the P-channel at TC = 25 °C. Total gate charges are typically 1 nC for the N-channel and 1.5 nC for the P-channel. The device operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

• Dual-channel configuration integrating complementary N- and P-channel transistors into a single compact SC-70 footprint.

Applications

• DC/DC converter circuits
• Load switch implementations

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance attributes. The standard lead-free and halogen-free variant is designated as SI1539CDL-T1-GE3. Ensure that the selected part number matches the required material categorization standards before finalizing procurement orders.

Selection Notes

Select this component for applications requiring a matched pair of low-voltage switches in a minimal surface-mount footprint. Evaluate thermal constraints carefully, as the small package limits steady-state power dissipation. Confirm that the required gate drive voltage aligns with the specified RDS(on) thresholds for optimal switching performance.

Part Context

This device belongs to the Vishay Siliconix TrenchFET family, utilizing advanced planar trench technology to achieve low on-resistance in miniature packages. The SC-70 form factor is designed for high-density PCB layouts where space is constrained but efficient switching of low-current loads is necessary.

Replacement Considerations

SI1539CDL-T1-GE3