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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.66A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：660mA, 410mA
- Rds On (Max) @ Id, Vgs：385mOhm @ 660mA, 4.5V
- Vgs(th) (Max) @ Id：600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：270mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI1553DL-T1-GE3 is a complementary MOSFET pair in an SOT-363 (SC-70) package. The N-channel device features a 20 V drain-source voltage and a maximum on-resistance of 0.630 Ω at VGS = 2.5 V. The P-channel counterpart offers a -20 V rating with a maximum RDS(on) of 1.800 Ω at VGS = -2.5 V. Both transistors utilize TrenchFET technology, support a junction temperature range from -55 °C to +150 °C, and are compliant with RoHS directives.
Feature Summary
- Complementary N-channel and P-channel configuration within a single surface-mount package
- TrenchFET power MOSFET technology for optimized performance
- Halogen-free construction according to IEC 61249-2-21 definition
Applications
- Low-voltage load switching applications
- Battery-powered portable electronics
- DC-DC converter output stages
Procurement Notes
Verify the specific ordering suffix when sourcing components. The GE3 designation confirms lead-free and halogen-free compliance, whereas the E3 variant indicates lead-free status without explicit halogen-free certification. Ensure the selected part number matches the required environmental specifications for the intended manufacturing process.
Selection Notes
Select this component for space-constrained designs requiring matched N-channel and P-channel characteristics. Evaluate thermal constraints carefully, as the small SOT-363 package limits steady-state power dissipation. Confirm that the gate drive voltage meets the threshold requirements for the desired on-resistance levels.
Part Context
This dual-transistor unit integrates one N-channel and one P-channel MOSFET into a compact SOT-363 footprint. It serves as a direct replacement for discrete pairs in logic-level switching circuits, reducing board space and simplifying assembly compared to using two separate components.
Replacement Considerations
Direct pin-compatible replacements include the SI1553DL-E3 for lead-only variants. Verify thermal resistance and current ratings against alternative SC-70 packages before substitution.
