SI1557DH-T1-E3

Description：MOSFET N/P-CH 12V SC70-6
Series：TrenchFET®

SKU:761b4954dae1 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 12V SC70-6
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：1.2A, 770mA
Rds On (Max) @ Id, Vgs：235mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id：1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：470mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SC-70-6
Grade：-
Qualification：-

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SI1557DH-T1-E3

Overview

The SI1557DH-T1-E3 is a dual MOSFET array manufactured by Vishay Siliconix, integrating N-channel and P-channel transistors in a single surface-mount package. The device utilizes TrenchFET technology for optimized performance. It operates with a gate-source voltage of 1.8 V and supports a drain-source voltage of 12 V. The N-channel transistor provides a continuous current rating of 1.2 A, while the P-channel variant handles 770 mA. Maximum power dissipation is rated at 470 mW. The component is housed in an SC-70-6 (SOT-363) package.

Feature Summary

Integrates complementary N-channel and P-channel MOSFETs into a single compact dual array
Utilizes TrenchFET technology to achieve low on-resistance and efficient switching characteristics
Designed for operation with a low gate-source threshold voltage of 1.8 V

Applications

Battery protection circuits requiring integrated dual-channel control
Load switch applications in portable electronic devices
Power management systems utilizing low-voltage logic interfaces

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to obsolescence status. Confirm RoHS compliance documentation aligns with project requirements. Validate that the specific suffix indicates lead-free composition as per Vishay standards. Ensure storage conditions maintain integrity prior to assembly.

Selection Notes

Select this component when space-constrained designs require both N-channel and P-channel switching capabilities within a minimal footprint. Consider the 1.8 V gate drive compatibility for low-power logic interfacing. Evaluate the 12 V breakdown voltage against system operating limits. Assess thermal constraints given the 470 mW dissipation rating in the small outline package.

Part Context

This part belongs to the SI1 series of dual MOSFET arrays from Vishay Siliconix. These components are designed to replace discrete dual-transistor solutions, reducing board area and assembly complexity. The integration supports cost-effective manufacturing for consumer electronics and mobile hardware where size and power efficiency are critical design parameters.