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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 1.13A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.13A
- Rds On (Max) @ Id, Vgs：280mOhm @ 1.13A, 4.5V
- Vgs(th) (Max) @ Id：450mV @ 100µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：570mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The SI1912EDH-T1-E3 is a dual N-channel enhancement mode MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an SOT-363-6 surface-mount package. The device features a drain-source breakdown voltage of 20 V and a continuous drain current rating of 800 mA. Key electrical parameters include a maximum on-resistance of 200 mOhms, a gate-source threshold voltage of 450 mV, and a total gate charge of 1.15 nC. It operates within a temperature range of -55 °C to +175 °C with a power dissipation capacity of 1.5 W.
Feature Summary
- Dual N-channel configuration for space-efficient circuit design
- TrenchFET technology for optimized low on-resistance performance
- AEC-Q101 automotive qualification for reliability
- High thermal stability supporting extended operating temperatures
Applications
- Load switching in portable electronic devices
- Power management circuits in automotive modules
- Battery protection systems requiring high reliability
- General-purpose switching in consumer electronics
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and AEC-Q101 certification requirements directly with authorized distributors or the manufacturer before procurement to align with project standards.
Selection Notes
Select this component when a dual N-channel solution is required in a compact SOT-363 footprint. Ensure the application demands a 20 V rating and 800 mA current capability. Verify that the 200 mOhm on-resistance meets the efficiency targets and that the 1.5 W power dissipation is sufficient for the thermal environment.
Part Context
This part belongs to the SQ series of Vishay Siliconix MOSFETs, which are specifically designed for automotive and industrial applications. The series emphasizes robustness and high-temperature operation, distinguishing it from standard commercial-grade counterparts through its AEC-Q101 qualification and extended junction temperature range.
Replacement Considerations
The SI1912EH-T1_GE3 is a verified alternative within the same family, offering identical electrical characteristics and pinout compatibility. Both parts share the SOT-363 package and AEC-Q101 qualification, allowing for direct substitution in designs where supply chain flexibility is required.
