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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.37A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：370mA
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 340mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：18.5pF @ 30V
- Power - Max：510mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI1926DL-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SOT-363 (SC-70 Dual) package. It features a drain-source voltage rating of 60 V and a maximum continuous drain current of 0.37 A at 25 °C case temperature. The on-state resistance is specified at 1.4 Ω max at VGS = 10 V and 3 Ω max at VGS = 4.5 V. Total gate charge is typically 0.9 nC at VGS = 10 V. The device includes ESD protection rated at 1800 V and operates within a junction temperature range of -55 to +150 °C.
Feature Summary
- Dual N-channel configuration with integrated body diodes
- TrenchFET power MOSFET architecture for optimized performance
- High electrostatic discharge protection capability
Applications
- Low power load switch applications
Procurement Notes
Verify the specific ordering suffix when sourcing components. The -E3 designation indicates lead-free construction. Confirm compliance requirements against the material categorization definitions provided by the manufacturer. Ensure that the selected variant matches the exact electrical specifications required for the target circuit design before finalizing procurement.
Selection Notes
Evaluate the thermal resistance characteristics carefully, as the junction-to-ambient rating is high due to the small package size. Consider derating curves for ambient temperatures exceeding 25 °C. Verify that the gate drive voltage meets the threshold requirements for the desired on-state resistance level. Check absolute maximum ratings to ensure safe operating area limits are not exceeded during transient conditions.
Part Context
This component belongs to the Si19 series of dual MOSFETs from Vishay Siliconix. It shares the SC-70 Dual footprint common to this family. The part number alias is Si1926DL-E3. It is designed for space-constrained portable electronics requiring low power switching capabilities.
Replacement Considerations
Check for direct equivalents within the Si19 series or other Vishay dual MOSFETs with matching 60 V ratings and similar RDS(on) values. Ensure pinout compatibility with the SOT-363 package layout. Verify that any substitute maintains the same ESD protection levels and thermal characteristics.
