SI1965DH-T1-E3

Overview

The Vishay Siliconix SI1965DH-T1-E3 is a dual P-Channel MOSFET utilizing TrenchFET technology, housed in an SC-70 (SOT-363) package. It features a drain-source voltage of -12 V and a continuous drain current of -1.3 A at 25 °C. The maximum on-state resistance is 0.390 Ω at VGS = -4.5 V, with a typical total gate charge of 1.7 nC at VGS = -4.5 V. Operating junction temperatures range from -55 °C to +150 °C, and the device supports a maximum power dissipation of 1.25 W.

Feature Summary

• Dual P-Channel configuration within a compact SMD footprint
• TrenchFET power MOSFET architecture for optimized performance
• Lead-free and halogen-free material compliance

Applications

• Load switch for portable devices

Procurement Notes

Verify component authenticity by checking the marking code DE against official datasheets. Confirm RoHS compliance status through manufacturer documentation. Validate that the specific ordering suffix matches the required lead-free or halogen-free specifications before finalizing procurement orders.

Selection Notes

Select this component for low-voltage applications requiring dual independent P-channel switching. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance level. Evaluate thermal management needs based on the specified junction-to-ambient resistance ratings under steady-state conditions.

Part Context

This part belongs to the Vishay Siliconix SI1 series of small-signal MOSFETs. It is designed for surface mount assembly, providing a compact solution for space-constrained circuit designs. The dual configuration allows for efficient implementation of bridge circuits or complementary switching functions.

Replacement Considerations

SI1965DH-T1-GE3 is the halogen-free variant of this component.