ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 1.3A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1.3A
- Rds On (Max) @ Id, Vgs：225mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：95pF @ 15V
- Power - Max：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
Download product information
Overview
The SI1970DH-T1-E3 is a dual P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a -20V drain-source breakdown voltage and an -8V gate-source voltage rating. The device supports a continuous drain current of 1.5A with a maximum on-resistance of 240 milliohms at -4.5V gate drive. Operating within a temperature range of -55°C to +150°C, it offers low gate charge for efficient switching. Packaged in a compact SOT-363-6 surface-mount configuration, this enhancement-mode transistor is designed for power management applications requiring small form factors.
Feature Summary
- Dual P-channel configuration integrated into a single compact package
- TrenchFET technology provides optimized on-resistance performance
- Enhancement mode operation suitable for low-side or high-side switching
Applications
- Power management circuits in portable devices
- Load switches for battery-powered equipment
- DC/DC converter input/output stages
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through official documentation before integration. Cross-reference the part number with authorized distributors to validate authenticity and traceability. Ensure storage conditions align with semiconductor handling guidelines to prevent moisture sensitivity issues during assembly.
Selection Notes
Select this component when a dual P-channel solution is required in a minimal footprint. Evaluate the 240 milliohm on-resistance against thermal dissipation requirements for the intended load current. Consider the -20V voltage rating for compatibility with standard 3.3V and 5V logic systems. Compare gate charge characteristics against switching frequency demands to optimize driver circuit design.
Part Context
This part belongs to the SI1 series of dual MOSFETs from Vishay Siliconix. It shares the SOT-363-6 package with other variants in the lineup but differs in voltage and current ratings. The series is engineered for space-constrained applications where multiple switching elements are needed without increasing board area.
Replacement Considerations
Check for direct pin-compatible alternatives within the same Vishay family that match the -20V and 1.5A specifications. Verify that any substitute maintains identical on-resistance and gate charge parameters to ensure circuit performance consistency.
