ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 1.3A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1.3A
- Rds On (Max) @ Id, Vgs：225mOhm @ 1.3A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：75pF @ 15V
- Power - Max：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
Download product information
Overview
The SI1972DH-T1-E3 is a dual P-Channel MOSFET from the Vishay Siliconix SI1 series, utilizing TrenchFET technology. It features a -20V drain-source voltage and a continuous drain current of 4.5A. The device offers a low on-resistance of 28mΩ at Vgs=-4.5V. Packaged in an SC-70-6 (SOT-363) surface-mount case, it supports operation between -55°C and +150°C junction temperature with a power dissipation of 1.25W.
Feature Summary
- Dual P-Channel configuration for space-efficient circuit designs
- TrenchFET technology for optimized on-resistance performance
- SC-70-6 package suitable for automated surface-mount assembly
Applications
- Low-side switching in portable battery-powered devices
- Load switch applications in consumer electronics
- Power management circuits requiring compact dual-channel solutions
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices. Ensure storage conditions meet semiconductor handling standards to prevent moisture sensitivity issues prior to soldering.
Selection Notes
Evaluate thermal resistance characteristics against PCB copper area constraints. Compare gate charge requirements with available driver capabilities. Verify that the -20V rating exceeds maximum circuit voltages including transient spikes. Consider the SC-70-6 footprint compatibility during layout design.
Part Context
This component belongs to the Vishay SI1 series of small-signal MOSFETs. It shares the SC-70-6 package form factor with other parts in the family but differs in electrical ratings. The part number suffix indicates tape and reel packaging with lead-free termination.
Replacement Considerations
Check for SI1972DH-E3 as a potential non-reel variant. Verify pinout compatibility before substituting with other dual P-Channel MOSFETs in similar packages.
