ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 1.3A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.3A
- Rds On (Max) @ Id, Vgs：168mOhm @ 1.4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.1nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：110pF @ 10V
- Power - Max：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
Download product information
Overview
The SI1988DH-T1-GE3 is a dual N-channel enhancement mode MOSFET manufactured by Vishay Siliconix. It features a 20V drain-source voltage rating and supports a continuous drain current of 1.3A. The device utilizes the TrenchFET technology for optimized performance. It is housed in an SC-70-6 surface-mount package, designed for efficient thermal management and compact circuit layouts. This component serves as a reliable switching solution for low-voltage applications requiring dual channel configuration.
Feature Summary
- Dual N-channel configuration within a single compact package
- Utilizes TrenchFET technology for enhanced efficiency
- Designed for surface-mount installation with robust thermal characteristics
Applications
- Low-voltage power switching circuits
- Battery protection modules
- Load switch applications in portable electronics
Procurement Notes
Verify the specific ordering suffix to ensure compliance with environmental standards. Confirm that the GE3 designation aligns with required RoHS and REACH directives for your manufacturing process. Cross-reference the manufacturer part number against official Vishay documentation to prevent substitution errors during assembly.
Selection Notes
Select this component when a dual N-channel topology is required within a minimal footprint. The 20V rating suits low-voltage systems, while the 1.3A current capacity addresses moderate load requirements. Consider the SC-70-6 package dimensions for PCB space constraints and verify gate drive compatibility with the specified threshold voltages.
Part Context
This part belongs to the Vishay Siliconix family of TrenchFET MOSFETs, which are engineered for high-speed switching and low on-resistance. The dual-channel design consolidates two independent switches into one package, reducing board area compared to discrete single-channel alternatives. It is intended for use in consumer electronics and industrial control systems where space efficiency is critical.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters before considering any alternative components from other manufacturers.
