ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
SI2310A is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists UMW. Its product description is 60V 3A 90MR@10V,3A 1.38W 3V@250A. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI2310A
- Description：60V 3A 90MR@10V,3A 1.38W 3V@250A
- Series：UMW
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：80mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：780 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.38W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for SI2310A
Single FETs, MOSFETs Overview
The SI2310A is a 60V N-Channel Enhancement Mode MOSFET manufactured by UMW in an SOT-23 package. It features a Drain-Source Voltage (VDSS) of 60V and a continuous Drain Current (ID) of 3A at 25°C, reducing to 2.3A at 70°C. The device exhibits a maximum static Drain-Source On-Resistance (RDS(on)) of 80mΩ at VGS=10V/ID=3A and 95mΩ at VGS=4.5V/ID=2A. Power dissipation is rated at 1.38W at 25°C with a thermal resistance (RthJA) of 90°C/W. The Gate Threshold Voltage ranges from 1V to 3V.
Single FETs, MOSFETs Feature Summary
- Advanced trench process technology for ultra-low on-resistance
- High density cell design for improved power handling capability
- Surface mount SOT-23 package optimized for portable applications
Single FETs, MOSFETs Applications
- Load switching for portable devices
- DC/DC converter circuits
- Battery switch management systems
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer marking matches UMW specifications. Confirm the package type is SOT-23 and the ordering code corresponds to the tape and reel delivery mode with a base quantity of 3000 units. Ensure the component meets RoHS compliance standards as indicated in the datasheet documentation.
Single FETs, MOSFETs Selection Notes
Select this component when a 60V N-Channel MOSFET is required for low-side switching applications. Consider the 80mΩ RDS(on) at 10V gate drive for efficiency. Evaluate the 1.38W power dissipation limit against thermal constraints. The SOT-23 form factor suits space-constrained designs requiring surface mount assembly.
Single FETs, MOSFETs Part Context
This part belongs to the UMW SI23xx series of plastic-encapsulated MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance within a compact footprint. The series is designed for general-purpose switching applications where high current handling and low thermal resistance are critical performance factors.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with SI2310 or SI2303 if voltage ratings align. Verify pinout compatibility (Gate, Source, Drain) before substitution. Check that replacement parts meet the same 60V VDSS and 3A ID requirements.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
