SI3850ADV-T1-GE3

Overview

The SI3850ADV-T1-GE3 is a complementary MOSFET pair manufactured by Vishay Siliconix, utilizing TrenchFET technology. It integrates an N-channel and a P-channel enhancement-mode field-effect transistor within a single TSOP-6 surface-mount package. The device supports a drain-source voltage of 20V. The N-channel component provides a continuous drain current of 1.4A with a maximum on-resistance of 300mΩ at 4.5V gate drive. The P-channel counterpart delivers 0.96A current capability with a maximum on-resistance of 410mΩ under identical conditions. Total power dissipation is rated at 1.08W.

Feature Summary

• Integrates complementary N-channel and P-channel MOSFETs in a compact TSOP-6 package for space-constrained designs.
• Utilizes TrenchFET technology to achieve low on-resistance characteristics for efficient power switching.
• Designed for high-speed switching applications requiring matched performance between paired transistors.

Applications

• Complementary half-bridge driver circuits
• Low-side and high-side load switching
• DC-DC converter output stages

Procurement Notes

Verify the specific suffix 'T1' against the manufacturer's latest documentation to confirm reel packaging specifications. Confirm RoHS compliance status through official Vishay declarations. Check for any obsolescence notices or lifecycle changes prior to finalizing procurement plans.

Selection Notes

Select this component when a matched N/P pair is required for half-bridge topologies. Ensure the 20V voltage rating aligns with the system bus voltage. Verify that the 1.4A and 0.96A current limits satisfy the load requirements for both channels during operation.

Part Context

This part belongs to the Vishay SI3 series of small-signal MOSFETs. It serves as a discrete solution for driving loads where complementary switching is necessary. The TSOP-6 package offers a footprint alternative to dual discrete packages while maintaining thermal performance suitable for low-power applications.

Replacement Considerations

Consult Vishay datasheets for direct pin-compatible alternatives within the SI38xx series. Verify that substitute parts match the 20V Vds rating and TSOP-6 package dimensions. Cross-reference on-resistance values to ensure equivalent thermal behavior.

FAQ

What is the maximum gate-source voltage for the SI3850ADV?

The absolute maximum gate-source voltage is typically ±20V, consistent with standard MOSFET ratings for this voltage class.

Does the SI3850ADV contain internal body diodes?

Yes, like most MOSFETs, it includes intrinsic body diodes between the source and drain terminals for each channel.

What is the operating temperature range?

The device is designed to operate within a junction temperature range typical for silicon MOSFETs, usually up to +150°C.