SI3900DV-T1-E3

$1.39

Description：MOSFET 2N-CH 20V 2A 6TSOP
Series：TrenchFET®

SKU:aac0cfb2e5c5 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 2A 6TSOP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：2A
Rds On (Max) @ Id, Vgs：125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：830mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：6-TSOP
Grade：-
Qualification：-

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SI3900DV-T1-E3

Overview

The Si3900DV-T1-E3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a continuous drain current of 2.4 A at 25 °C with an on-state resistance of 0.125 Ω at VGS = 4.5 V. Packaged in a TSOP-6 surface-mount configuration, it offers a maximum power dissipation of 1.15 W at 25 °C.

Feature Summary

Dual N-channel architecture integrating two independent MOSFETs in a single package
TrenchFET power MOSFET technology for optimized performance
Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

Low-voltage DC-to-DC converter circuits
Power management systems requiring compact dual-switch configurations
Battery protection and load switching applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free status and halogen-free compliance. Confirm that the component meets RoHS Directive 2002/95/EC requirements before integration into regulated assemblies. Ensure the procurement channel sources directly from authorized distributors to maintain product integrity.

Selection Notes

Select this component for designs requiring a 20 V breakdown voltage and low on-resistance in a minimal footprint. Evaluate thermal constraints carefully, as the TSOP-6 package has a high junction-to-ambient thermal resistance. Verify gate drive levels to ensure optimal RDS(on) performance at 4.5 V or 2.5 V.

Part Context

This part belongs to the Vishay Siliconix Si3900 series of dual N-channel MOSFETs. It is designed for space-constrained applications where multiple switches are needed. The TSOP-6 package allows for efficient surface mounting on standard FR4 boards.

Replacement Considerations

Si3900DV-T1-GE3 (Lead-free and Halogen-free variant)

FAQ

What is the maximum pulsed drain current for the Si3900DV?

The maximum pulsed drain current is 8 A with a pulse width of 10 µs.

Does the Si3900DV support synchronous rectification?

Yes, the internal body diode characteristics, including forward voltage and reverse recovery time, make it suitable for synchronous rectification in low-voltage DC-DC converters.