SI3900DV-T1-GE3

Overview

The Vishay Siliconix Si3900DV-T1-GE3 is a dual N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a maximum continuous drain current of 2.4 A at 25 °C, with an on-state resistance of 0.125 Ω at VGS = 4.5 V and 0.200 Ω at VGS = 2.5 V. Packaged in a TSOP-6 surface-mount configuration, it offers a typical total gate charge of 4.0 nC and a forward transconductance of 5 S.

Feature Summary

• Dual N-channel configuration for space-efficient circuit designs
• TrenchFET power MOSFET technology for optimized performance
• Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

• Battery protection circuits
• Power management systems
• Load switching applications

Procurement Notes

Verify the specific ordering suffix to ensure compliance with halogen-free requirements. Confirm that the component matches the TSOP-6 package dimensions and pinout layout before integration into the printed circuit board design. Cross-reference the manufacturer's datasheet revision history to validate the most current electrical specifications and thermal characteristics.

Selection Notes

Evaluate the thermal resistance parameters against the expected ambient operating conditions to ensure adequate heat dissipation. Consider the gate threshold voltage and total gate charge when designing the driving circuitry for optimal switching speeds. Verify that the continuous and pulsed drain current ratings align with the peak load requirements of the target application.

Part Context

This component belongs to the Vishay Siliconix TrenchFET family of dual MOSFETs. It shares the TSOP-6 package form factor with other low-voltage devices in the series but is distinguished by its specific 20 V breakdown voltage and dual-channel architecture designed for compact power control solutions.

Replacement Considerations

Direct replacements must match the TSOP-6 package, 20 V rating, and dual N-channel configuration. Verify equivalent RDS(on) values and thermal resistance characteristics to maintain circuit performance without redesigning the footprint or cooling infrastructure.

FAQ

What is the maximum junction-to-ambient thermal resistance?

The maximum junction-to-ambient thermal resistance is 150 °C/W under steady-state conditions.

Does the Si3900DV support lead-free manufacturing?

Yes, the Si3900DV-T1-GE3 variant is explicitly manufactured as lead-free and halogen-free.

What is the source-drain reverse recovery time?

The source-drain reverse recovery time is typically 30 ns and has a maximum rating of 50 ns.